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MIL-PRF-19500-628 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6690 Through 1N6693, 1N6690Us Through 1N6693Us Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/628C
TABLE I. Group A inspection.
Inspection
1/
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
Thermal impedance
3101
See 4.3.1
ZθJX
Breakdown voltage
4022
IR = 100 A dc; pulsed (see 4.5.1)
VBR
V
600
1N6690, 1N6690US
800
1N6691, 1N6691US
1,000
1N6692, 1N6692US
1,200
1N6693, 1N6693US
Duty cycle ≤ 2 percent (pulsed) (see
Forward voltage
4011
V
4.5.1); tp = 8.3 ms (max).
VF1
1.25
IF = 5 A
1.9
VF2
IF = 20 A
2.4
VF3
IF = 70 A
µA
Reverse current leakage
4016
VRM = column 2 (peak) of 1.3; pulsed
IR1
10
(see 4.5.1)
Subgroup 3
TC = +100°C
High temperature
operation:
Reverse current leakage
4016
IR2
250
mA
VRM = column 2 (peak) of 1.3; pulsed
(see 4.5.1)
TA = -65°C
Low temperature
operation:
Forward voltage
4011
IF = 5 A (pk); pulsed (see 4.5.1)
VF4
1.5
V
Subgroup 4
Scope display
4023
Stable only. See 4.5.4, n = 116,
c=0
trr
75
ns
Reverse recovery time
4031
Condition B; IF = .5 A, IR = 1 A;
IRR = .25 A
Junction capacitance
4001
250
pF
VR = 10 V dc; f = 1 MHz;
CJ
VSIG = 50 mV (p-p) (maximum)
Subgroup 5
Not applicable
See footnote at end of table.
9



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