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MIL-PRF-19500-629 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N6702 And 1N6702Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated die \(element evaluation\).

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MIL-PRF-19500/629C
TABLE I. Group A inspection.
*
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
Thermal impedance
3101
See 4.3.3
ZθJX
Forward voltage
4011
IFM = 3.0 A (pk) pulse method (see 4.5.1)
0.44
V
VFM1
IFM = 5.0 A (pk) pulse method (see 4.5.1)
VFM2
4011
0.47
V
IFM = 15.7 A (pk) pulse method (see 4.5.1)
VFM3
4011
0.60
V
Reverse current leakage
4016
VRM = 40 V (pk) pulse method (see 4.5.1)
0.20
mA
IRM1
Subgroup 3
TA = +100°C
High temperature
operation:
VRM = 40 V (pk) pulse method (see 4.5.1)
IRM2
Reverse current leakage
4016
25.0
mA
IF = 5.0 A (pk) pulse method (see 4.5.1)
VFM4
0.47
Forward voltage
4011
V
TA = -55°C
Low temperature
operation:
Reverse current leakage
4016
VRM = 40 V (pk) pulse method (see 4.5.1)
1.00
mA
IRM3
IF = 5.0 A (pk) pulse method (see 4.5.1)
VFM5
Forward voltage
4011
0.62
V
Subgroups 4, 5, 6, and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
10



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