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MIL-PRF-19500-629 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N6702 And 1N6702Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated die \(element evaluation\).

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MIL-PRF-19500/629C
Symbol
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
.088
.090
2.24
2.29
B
.078
.080
1.98
2.03
Design data
Metallization:
Top: (Anode) ............. Al
Back: (Cathode) ........ Au
AL thickness............... 25,000 Å minimum.
Gold thickness ........... 4,000 Å minimum.
Chip thickness............ 10 mils (0.254 mm) ± 2 mils (0.051mm).
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
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