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MIL-PRF-19500-629 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N6702 And 1N6702Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated die \(element evaluation\).

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MIL-PRF-19500/629C
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
the applicable inspections of table I, subgroup 2 herein.
* 4.4.3.1 Group C inspection table VII of MIL-PRF-19500.
Method
Condition
Subgroup
C2
2036
Tension: Test condition A; weight = 20 pounds; t = 15 s. Lead fatigue:
Test condition E; weight 1 pounds. NOTE: Both tension and lead
fatigue are not applicable for US suffix devices.
C5
3101
See 4.4.5 herein.
TA = 90°C; VRWM = 40 V(pk); IO = 0, half sine wave, f = 60 Hz. TA
C6
1026
adjusted to achieve TJ = +110°C minimum.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and the
conditions for subgroup testing herein. Electrical measurements (end-points) shall be in accordance with table I,
subgroup 2 herein.
* 4.4.5 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101 or 4081 of
MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for
RθJL under these test conditions shall be RθJL (max) = 20°C/W, RθJEC (max) = 10°C/W. The following conditions shall
apply when using method 3101:
a. IM ................... 1 mA to 10 mA.
b. IH .................... 3.0 A.
c. tH ................... 20 seconds minimum.
d. tMD ................. 100 µs maximum.
LS = lead spacing = .375 inch (9.53 mm) for non-surface mount devices and 0 inch for surface mount devices as
follows:
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in MIL-STD-750.
4.5.2 Steady-state operation life. This test shall be conducted with a half-sine wave of the specified peak voltage
impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average
rectified current. The forward conduction angle of the rectified current shall not be greater than 180 degrees nor less
than 150 degrees.
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