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MIL-PRF-19500-629 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N6702 And 1N6702Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated die \(element evaluation\).

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MIL-PRF-19500/629C
Temperature-Current Derating Curve
1N6702 Schottky @ 25% Vr
6
Legend
(Top to Bottom)
Vr=10V
5
Vr=20V
Vr=40V
Vr=60V
4
Vr=80V
3
2
1
0
25
50
75
100
125
150
Tl (ºC) (Lead 3/8")
Sinewave Operation 50% Duty Cycle
Thermal Resistance Junction to Lead 3/8" = 20.0ºC/W
* FIGURE 4b. Temperature current derating at 25 percent Vr for 1N6702.
Temperature-Current Derating Curve
1N6702US Schottky
6
Legend
(Top to Bottom)
Vr=10V
5
Vr=20V
Vr=40V
Vr=60V
4
Vr=80V
3
2
1
0
25
50
75
100
125
150
Tec (ºC) (Solder Points)
Sinewave Operation 50% Duty Cycle
Thermal Resistance Junction to Solder Points = 10.0ºC/W
* FIGURE 5. Temperature current derating for 1N6702US.
13



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