MIL-STD-750 Test Methods For Semiconductor DevicesThis standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in the various parts of this standard cover basic environmental, physical, and electrical tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations. For the purpose of this standard, the term quot;devicesquot; includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods and procedures described in the various parts of this multipart test method standard have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field and to obtain reproducibility of the results of tests. The test methods described by this standard are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location since it is known that the only true test for operation in a specific location is an actual service test at that point. b. To describe, in a series of standards, all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications so that these test methods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general test methods adaptable to a broad range of devices. c. The test methods described by this standard for environmental, physical, and electrical testing of semiconductor devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing.

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MIL-STD-750F

w/CHANGE 1

CONTENTS

PARAGRAPH                                                                                                                                           PAGE FOREWORD..…………………………………………………………………………………..……….…...…..ii

SUMMARY OF CHANGE 1 MODIFICATIONS.....................................................................................iii

1.       SCOPE .......................................................................................................................................1

1.1           Purpose.................................................................................................................................1

1.2           Numbering system ................................................................................................................1

1.2.1              Classification of tests.......................................................................................................1

1.2.2              Test method revisions .....................................................................................................1

1.3           Methods of reference ............................................................................................................1

2.       APPLICABLE DOCUMENTS......................................................................................................2

2.1           General .................................................................................................................................2

2.2           Government documents........................................................................................................2

2.2.1              Specifications, standards, and handbooks ......................................................................2

2.3           Non-Government publications...............................................................................................3

2.4           Order of precedence .............................................................................................................3

3.       DEFINITIONS .............................................................................................................................3

3.1           Acronyms, symbols, and definitions ......................................................................................3

3.1.1              Acronyms used in this standard.......................................................................................3

4.       GENERAL REQUIREMENTS.....................................................................................................5

4.1           Test conditions ......................................................................................................................5

4.1.1              Permissible temperature variation in environmental chambers .......................................5

4.1.2              Electrical test frequency ..................................................................................................5

4.1.3              Sinusoidal pulse testing...................................................................................................5

4.1.4              Accuracy..........................................................................................................................5

4.1.4.1                Control based on uncertainty.....................................................................................6

4.1.4.2                Test methods and circuits..........................................................................................6

4.1.5              Calibration requirements .................................................................................................7

4.2           Orientations...........................................................................................................................7

4.3           General precautions..............................................................................................................9

4.3.1              Transients........................................................................................................................9

4.3.2              Test conditions for electrical measurements ...................................................................9

4.3.2.1                Thermal resistance measurements (test method series 3100) ..................................9

4.3.2.2                Low frequency tests (test method series 3200) .........................................................9

4.3.2.3                High frequency tests (test method series 3300).........................................................9

4.3.2.4                Electrical characteristics tests for MOS field effect transistors (3400 series).............9

4.3.2.5                Steady-state dc measurements (test method series 4000)........................................9

4.3.2.6                Pulse measurements (test method series 4000)........................................................9

4.3.2.7                Electrical characteristics tests for microwave diodes (test method series 4100)........10

4.3.3              Test circuits .....................................................................................................................10

4.3.3.1                Test method variation ................................................................................................10

4.3.4              Soldering .........................................................................................................................10

4.3.5              Order of connection of leads ...........................................................................................10

4.3.6              Radiation precautions......................................................................................................10

4.3.7              Handling precautions.......................................................................................................11

4.3.7.1                UHF and microwave devices .....................................................................................11

4.3.7.2                Electrostatic discharge sensitive devices...................................................................11

4.4           Continuity verification of burn-in and life tests .......................................................................11

4.4.1        Bias interruption ....................................................................................................................11

4.5           Requirements for high temperature reverse bias (HTRB) and burn-in ..................................12

4.6           Bias requirements .................................................................................................................12

4.7           Destructive tests....................................................................................................................13

iv

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