MIL-STD-750 Test Methods For Semiconductor DevicesThis standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in the various parts of this standard cover basic environmental, physical, and electrical tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations. For the purpose of this standard, the term quot;devicesquot; includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods and procedures described in the various parts of this multipart test method standard have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field and to obtain reproducibility of the results of tests. The test methods described by this standard are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location since it is known that the only true test for operation in a specific location is an actual service test at that point. b. To describe, in a series of standards, all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications so that these test methods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general test methods adaptable to a broad range of devices. c. The test methods described by this standard for environmental, physical, and electrical testing of semiconductor devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing.

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MIL-STD-750F

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4.8 Non-destructive tests. Unless otherwise demonstrated, the following test methods are classified as nondestructive:

Test method number	Test
1001	Barometric pressure
1022	Resistance to solvents
1026, 1027	Steady-state life
1031, 1032	High temperature life (non-operating)
1038, 1039, 1040	Burn-in screen
1042 (Condition A, B, and C)	Burn-in/life test for power MOSFETs
1051 (100 cycles or less)	Thermal shock (temperature cycling)
1071	Hermetic seal tests
2006	Constant acceleration
2016	Shock
2026	Solderability (if the original lead finish is unchanged and if the maximum allowable number of reworks is not exceeded.)
2052	PIND test
2056	Vibration, variable frequency
2066	Physical dimensions
2069, 2070, 2072, 2073, 2074	Internal visual (pre-cap)
2071	External visual
2076	Radiographic inspection
2081	FIST
2082	BIST
3101	Thermal impedance testing of diodes
3103	Thermal impedance measurements for IGBTs
3104	Thermal impedance measurements for GaAs
3051, 3052, 3053 (with limited supply voltage)	SOA (condition A for test method 3053)
3131	Thermal resistance (emitter to base forward voltage, emitter-only switching method)
4066	Surge current
4081	Thermal resistance of lead mounted diode (forward voltage, switching method)

NOTE: When the junction temperature exceeds the device maximum rated junction temperature for any operation or test (including electrical stress test), these tests shall be considered destructive except under transient surge or nonrepetitive fault conditions, or approved accelerated screening, when it may be desirable to allow the junction temperature to exceed the rated junction temperature. The feasibility shall be determined on a part by part basis and, in the case where it is allowed adequate sample testing, shall be performed to provide the proper reliability safeguards.