MIL-STD-750 Test Methods For Semiconductor DevicesThis standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in the various parts of this standard cover basic environmental, physical, and electrical tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations. For the purpose of this standard, the term quot;devicesquot; includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods and procedures described in the various parts of this multipart test method standard have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field and to obtain reproducibility of the results of tests. The test methods described by this standard are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location since it is known that the only true test for operation in a specific location is an actual service test at that point. b. To describe, in a series of standards, all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications so that these test methods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general test methods adaptable to a broad range of devices. c. The test methods described by this standard for environmental, physical, and electrical testing of semiconductor devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing.

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MIL-STD-750F

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4.3.2.7 Electrical characteristics tests for microwave diodes (test method series 4100). When device static or dynamic parameters are measured under pulsed conditions, in order to avoid measurement errors introduced by device heating during the measurement period, the following items should be covered in the performance specification sheet:

a. Measurement of conversion loss, output noise ratio, and other microwave parameters shall be conducted with the device fitted in the holder. All fixed adjustments of the holder shall be made at a laboratory designated by the Government. In the test equipment, the impedance presented to the mixer by the local oscillator (and the signal generator, if used) shall be the characteristic impedance of the transmission line between the local oscillator and mixer (the maximum VSWR, looking toward the local oscillator, shall be

1.05 at the signal and image frequencies).

b. For qualification inspection of reversible UHF and microwave devices, the radio frequency measurements, excluding the post environmental test end points and high temperature life (nonoperating) end points, shall be made, first, with the adapter on one end of the device, and then repeated with the adapter at the opposite end of the device; for the environmental and life tests, fifty percent of each sample shall be tested with the adapter on one end of the device and the remaining half of the sample shall be tested with the adapter on

the opposite end of the device. End point measurements shall be made without moving the adapter. This procedure shall be repeated on at least one lot every 6 months.

c. For quality conformance inspection of reversible UHF and microwave devices, the electrical measurements, including the post environmental test end points, may be made with the adapter on either end of the device.

4.3.3 Test circuits. The circuits shown are given as examples which may be used for the measurements. They are not necessarily the only circuits which can be used; however the manufacturer shall demonstrate to the Government that other circuits which they may desire to use will give results within the desired accuracy of measurement. Circuits are shown for PNP transistors in one circuit configuration only. They may readily be adapted for NPN devices and for other circuit configurations.

4.3.3.1 Test method variation. Variation from the specified test methods used to verify the electrical parameters are allowed provided that it is demonstrated to the preparing activity, or their agent, that such variations in no way relax the requirements of this standard and that they are approved before testing is performed. For proposed test variations, a test method comparative error analysis shall be made available for checking by the preparing activity or their agent.

4.3.4 Soldering. Adequate precautions shall be taken to avoid damage to the device during soldering required for tests.

4.3.5 Order of connection of leads. Care should be taken when connecting a semiconductor device to a power source. The common terminal shall be connected first.

4.3.6 Radiation precautions. Due precautions shall be used in storing or testing semiconductor devices in substantial fields of X-rays, neutrons, or other energy particles.