MIL-STD-750 Test Methods For Semiconductor DevicesThis standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in the various parts of this standard cover basic environmental, physical, and electrical tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations. For the purpose of this standard, the term quot;devicesquot; includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods and procedures described in the various parts of this multipart test method standard have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field and to obtain reproducibility of the results of tests. The test methods described by this standard are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location since it is known that the only true test for operation in a specific location is an actual service test at that point. b. To describe, in a series of standards, all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications so that these test methods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general test methods adaptable to a broad range of devices. c. The test methods described by this standard for environmental, physical, and electrical testing of semiconductor devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing.

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MIL-STD-750F

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2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

ASME INTERNATIONAL (ASME)

ASME Y14.38 - Abbreviations and Acronyms for Use on Drawings and Related Documents. (Copies of these documents are available online at https://www.asme.org or from ASME International, Three Park

Avenue, New York, NY 10016-5990.) NCSL INTERNATIONAL (NCSL)

NCSL Z540.3 - Requirements for the Calibration of Measuring and Test Equipment.

(Copies of this document are available online at https://www.ncsli.org or can be obtained through NCSL International, 2995 Wilderness Place, Suite 107, Boulder, CO 80301-5404.)

2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein (except for related applicable specification sheet, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. DEFINITIONS

3.1 Acronyms, symbols, and definitions. For the purposes of this standard, the acronyms, symbols, and definitions specified in MIL-PRF-19500, ASME Y14.38, and herein shall apply.

3.1.1 Acronyms used in this standard. Acronyms used in this standard are defined as follows:

a.	BIST	- Backward instability shock test.
b	CFM	- Cubic feet per minute.
c.	DUT	- Device under test.
d.	ESD	- Electrostatic discharge.
e.	ESDS	- Electrostatic discharge sensitivity.
f.	FET	- Field-effect transistor.
g.	FIST	- Forward instability shock test.
h.	GaAs	- Gallium Arsenide.
i.	HTRB	- High temperature reverse bias.
j.	Hz	- Hertz.
k.	ICBO	- Collector to base cutoff current.
l.	IGBT	- Insulated gate bipolar transistor.
m.	LCC	- Leadless chip carrier.