MIL-STD-750 Test Methods For Semiconductor DevicesThis standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in the various parts of this standard cover basic environmental, physical, and electrical tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations. For the purpose of this standard, the term quot;devicesquot; includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods and procedures described in the various parts of this multipart test method standard have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field and to obtain reproducibility of the results of tests. The test methods described by this standard are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location since it is known that the only true test for operation in a specific location is an actual service test at that point. b. To describe, in a series of standards, all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications so that these test methods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general test methods adaptable to a broad range of devices. c. The test methods described by this standard for environmental, physical, and electrical testing of semiconductor devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing.

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MIL-STD-750F

w/CHANGE 1

4. GENERAL REQUIREMENTS

4.1 Test conditions. Unless otherwise specified herein or in the individual specification sheet, all measurements and tests shall be made at thermal equilibrium at an ambient temperature of 25°C ±3°C and at ambient atmospheric pressure and relative humidity and the specified test condition C (at environmentally elevated and reduced temperatures shall have a tolerance of ±3 percent, or +3°C, whichever is greater). Whenever these conditions must be closely controlled in order to obtain reproducible results, the referee conditions shall be as follows: Temperature

25°C ±1°C; relative humidity 50 ±5 percent; and atmospheric pressure from 650 to 800 millimeters of mercury. Unless otherwise specified in the detail test method, for mechanical test methods, (series 2000), the ambient temperature should be 25°C ±10°C.

4.1.1 Permissible temperature variation in environmental chambers. When chambers are used, specimens under test shall be located only within the working area defined as follows:

a. Temperature variation within working area: The controls for the chamber shall be capable of maintaining the temperature of any single reference point within the working area within ±2°C or ±4 percent, whichever is greater.

The controls for the chamber shall be such that the temperature of any single reference point within the working area shall not deviate more than ±2°C or ±4 percent, whichever is greater.

b. Space variation within working area: Chambers shall be so constructed that, at any given time, the temperature of any point within the working area shall not deviate more than ±3°C or ±3 percent, whichever is greater, from the reference point, except for the immediate vicinity of specimens generating heat.

c. Chambers with specified minimum temperatures (such as those used in burn-in and life tests): When test requirements involve a specified minimum test temperature, the controls and chamber construction shall be such that the temperature of any point within the working area shall not deviate more than +8°C, -0°C; or +8 percent, -0 percent, whichever is greater, from the specified minimum temperature, except for the

immediate vicinity of the specimens generating heat.

4.1.2 Electrical test frequency. Unless otherwise specified, the electrical test frequency shall be 1,000 ±25 Hertz

(Hz).

* 4.1.3 Sinusoidal pulse testing. For tests (e.g. test method 1040, condition A) which require a 60 Hz half wave sinusoidal input; a 50 Hz signal is acceptable for testing performed in European and Asian countries.

4.1.4 Accuracy. The specified limits are for absolute (true) values, obtained with the specified (nominal) test conditions. Proper allowance shall be made for measurement errors (including those due to deviations from nominal test conditions) in establishing the working limits to be used for the measured values, so that the true values of the device parameters (as they would be under nominal test conditions) are within the specified limits.

The following electrical test tolerances and precautions, unless otherwise specified in the applicable acquisition document, shall be maintained for all device measurements to which they apply (test methods series 3000, 4000 and other specified electrical measurements). Wherever test conditions are specified in the applicable acquisition document to a precision tighter than the tolerances indicated below, the specified conditions shall apply and take precedence over these general requirements.

a. Bias conditions shall be held to a tolerance of ±3 percent of the specified value, except for breakdown testing (see 4.1.4.c).

b. Such properties as input pulse characteristics, repetition rates, and frequencies shall be held to a tolerance of ±10 percent. Nominal values shall be chosen so that ±10 percent variation (or the actual test equipment variation, if less than 10 percent) does not affect the accuracy or validity of the measurement of the specified value.