MIL-PRF-19500-115 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3821A Through 1N3828A, 1N3016B Through 1N3051B, 1N3821A┬Û1 Through 1N3828A┬Û1, 1N3016B┬Û1 Through 1N3051B┬Û1, 1N3821Aur┬Û1 Through 1N3828Aur┬Û1, 1N3016Bur┬Û1 Through 1N3051Bur┬Û1, Plus C┬Û And D┬Û Tolerance Suffix, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for die.

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MIL-PRF-19500/115N

TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Qualification

Inspection 1/

MIL-STD-750

conformance

inspection

Method

Conditions

45 devices,

Subgroup 1

c=0

Temperature cycling

1051

500 cycles.

1056

500 cycles.

Thermal shock

Hermetic seal

1071

Electrical measurements

See table I, subgroup 2 and 4.

Subgroup 2

45 devices,

c=0

Intermittent life

1037

6,000 cycles.

Electrical measurements

See table I, subgroup 2 and 4.

Subgroup 3

3 devices,

c=0

Decap analysis

2101

Cross section or scribe and break.

Separate samples shall be used for each test.

Subgroup 4

See MIL-PRF-19500.

Thermal impedance curves

(-1 devices only)

Subgroup 5 and 6

Not applicable

Subgroup 8

45 devices

Resistance to glass

1057

Condition B. Cool down after solder immersion is

cracking (-1 devices only)

permitted. Test until failure occurs on all devices

with the chosen sample or to a maximum of 25

cycles, whichever comes first.

1/ A separate sample may be pulled for each test.