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MIL-PRF-19500-115 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3821A Through 1N3828A, 1N3016B Through 1N3051B, 1N3821A┬Û1 Through 1N3828A┬Û1, 1N3016B┬Û1 Through 1N3051B┬Û1, 1N3821Aur┬Û1 Through 1N3828Aur┬Û1, 1N3016Bur┬Û1 Through 1N3051Bur┬Û1, Plus C┬Û And D┬Û Tolerance Suffix, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for die.

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MIL-PRF-19500/115N
Temperature-Power Derating Curve
DO-13
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
175
200
DC Operation
Tl (ºC) (Leads 3/8")
Thermal Resistance Junction to Leads 3/8" = 80.0ºC/W
NOTES:
1. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will
intersect the appropriate power for the desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperature (TJ 175C) and power rating
specified. (See 1.3 herein.)
3. Derate design curve chosen at TJ 150C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ 125C, and 110C to show power rating where most users want to limit
TJ in their application.
FIGURE 6. Temperature-power derating curve (DO-13).
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