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MIL-PRF-19500-115 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3821A Through 1N3828A, 1N3016B Through 1N3051B, 1N3821A┬Û1 Through 1N3828A┬Û1, 1N3016B┬Û1 Through 1N3051B┬Û1, 1N3821Aur┬Û1 Through 1N3828Aur┬Û1, 1N3016Bur┬Û1 Through 1N3051Bur┬Û1, Plus C┬Û And D┬Û Tolerance Suffix, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for die.

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MIL-PRF-19500/115N
B Version
Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.035
.039
0.89
0.99
B
.027
.031
0.68
0.79
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics of the die thickness are .012 002 (0.30 mm ±0.051 mm).
Metallization is:
Top (anode) - Al,
Back (cathode) - Au,
Al thickness = 40,000Å minimum,
Au thickness = 5,000Å minimum.
4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
FIGURE 5. Physical dimensions JANHCB die.
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