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MIL-PRF-19500-228 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, Jan And JantxThis specification covers the performance requirements for 1.0 ampere silicon rectifier diodes. Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/228R
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
Sampling
plan
Method
Conditions
Subgroup 1A
45 devices
c=0
20 cycles, except high temperature shall be 150°C and low
Temperature cycling
1/ 1051
temperature shall be -195°C.
(air to air)
Hermetic seal 2/
1071
Electrical
See table I, subgroup 2 and table III, steps 1 and 2.
measurements
Subgroup 1B
45 devices
c=0
500 cycles, condition C, -65°C to +175°C.
Temperature cycling
1051
(air to air)
Hermetic seal 2/
1071
Electrical
See table I, subgroup 2 and table III, steps 1 and 2.
measurement
22 devices
Subgroup 2
c=0
TA = +150°C; t = 1,000 hours +65, -0 hours; dc = 80 - 85 percent
Steady-state dc
1048
blocking life
rated VRWM (see 1.3).
Electrical
See table I, subgroup 2.
measurement
Subgroup 4
Thermal impedance
curves
Subgroup 5
22 devices
c=0
Barometric pressure
1001
1N3611, 1N3612, and 1N3613 at 8 mm Hg; 1N3614 and 1N3957
(reduced)
at 33 mm Hg.
7
See footnotes at end of table.
10



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