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MIL-PRF-19500-228 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, Jan And JantxThis specification covers the performance requirements for 1.0 ampere silicon rectifier diodes. Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/228R

TABLE I. Group A inspection.

Inspection 1/

Symbol

Limits

Unit

MIL-STD-750

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

inspection

Subgroup 2

�C/W

Thermal impedance

3101

See 4.3.2.

ZθJX

Forward voltage

4011

IF = 1 A dc (pulsed, see 4.5.2); duty

VF1

1.1

V pk

cycle = 2 percent maximum.

Forward voltage

4011

IF = 3 A dc (pulsed, see 4.5.2);

VF2

1.3

V pk

tp ≤ 8.3 ms, 2 percent maximum duty

cycle.

Reverse current

4016

IR1

1.0

�A

VR = rated VRWM (see 1.3), dc method

leakage

or equivalent pulse.

IBR = 50 uA.

Breakdown voltage

4022

VBR

1N3611

220

1N3612

440

1N3613

660

1N3614

880

1N3957

1100

Subgroup 3

TA = +125�C.

High temperature

operation:

�a

Reverse current

4016

VR = rated VRWM

IR2

300

leakage

(see 1.3), dc method or equivalent

pulse.

1N3611

VR = 200

1N3612

VR = 400

VR = 600

1N3613

VR = 800

1N3614

VR = 1,000

1N3957

TA = -55�C.

Low temperature

operation:

IF = 3.0 A dc (pulsed, see 4.5.2).

Forward voltage

4011

VF3

0.6

1.5

Subgroup 4

�s

Reverse recovery time

4031

Condition B1

trr

Scope display

4023

See 4.5.3, n = 116, c = 0.

evaluation

See footnote at end of table.