MIL-PRF-19500-228 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, Jan And JantxThis specification covers the performance requirements for 1.0 ampere silicon rectifier diodes. Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/228R

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.

Inspection

Sampling

plan

Method

Conditions

Subgroup 8

Peak reverse power

4065

45 devices

Peak reverse power (PRM) = shall be characterized by the supplier

c=0

and this data shall be available to the Government. Test shall be

performed on each sublot.

Electrical

During the PRM test, the voltage (VBR) shall be monitored to verify

measurement

it has not collapsed. Any collapse in VBR during or after the PRM

test, or rise in leakage current (IR) after the test, that exceeds IR1

in table I herein shall be considered a failure to that level of

applied PRM. Progressively higher levels of PRM shall be applied

until failure occurs on all devices within the chosen sample size.

45 devices

Subgroup 9

c=0

Resistance to glass

1057

Test condition B. Step stress to destruction by increasing cycles

cracking

or up to a maximum of 25 cycles.

Subgroup 10

22 devices

c=0

Forward surge

4066

IFSM = rated (see 1.3); ten surges of 8.3 ms each at 1 minute

intervals superimposed on IO = 1.0 A (see 1.3); VRWM = rated (see

1.3); TA = + 55�C.

Electrical

See table I, subgroup 2.

measurement

1/ Test method 1056 of MIL-STD-750, condition D, using liquid nitrogen may be used in lieu of test method 1051.

2/ For opaque glass diodes use test method 2068 of MIL-STD-750.