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MIL-PRF-19500-251 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2218, 2N2218A, 2N2218Al, 2N2219, 2N2219A, And 2N2219Al, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/251R
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector to emitter cutoff
3041
Bias condition C
ICES
current
10
nA dc
2N2218, 2N2219
VCE = 30 V dc
2N2218A, 2N2219A
10
nA dc
VCE = 50 V dc
2N2218AL, 2N2219AL
10
nA dc
VCE = 50 V dc
Emitter to base cutoff current
3061
10
nA dc
Bias condition D; VEB = 4 V dc
IEBO2
3036
Bias condition D
Collector to base cutoff
ICBO2
current
nA dc
10
2N2218, 2N2219
VCB = 50 V dc
2N2218A, 2N2219A
10
nA dc
VCB = 60 V dc
2N2218AL, 2N2219AL
10
nA dc
VCB = 60 V dc
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 0.1 mA dc;
hFE1
pulsed (see 4.5.1)
2N2218
20
2N2219
35
2N2218A, 2N2218AL
30
2N2219A, 2N2219AL
50
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 1.0 mA dc;
hFE2
pulsed (see 4.5.1)
2N2218
25
150
2N2219
50
325
2N2218A, 2N2218AL
35
150
2N2219A, 2N2219AL
75
325
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 10 mA dc;
hFE3
pulsed (see 4.5.1)
2N2218
35
2N2219
75
2N2218A, 2N2218AL
40
2N2219A, 2N2219AL
100
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 150 mA dc;
hFE4
pulsed (see 4.5.1)
2N2218
40
120
2N2219
100
300
2N2218A, 2N2218AL
40
120
2N2219A, 2N2219AL
100
300
Forward-current transfer
3076
VCE = 10 V dc; IC = 500 mA dc;
hFE5
ratio
pulsed (see 4.5.1)
2N2218
20
2N2219
30
2N2218A, 2N2218AL
20
2N2219A, 2N2219AL
30
See footnotes at end of table.
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