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MIL-PRF-19500-251 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2218, 2N2218A, 2N2218Al, 2N2219, 2N2219A, And 2N2219Al, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/251R
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
2071
n = 45 devices, c = 0
examination 3/
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents
1022
n = 15 devices, c = 0
3/ 4/ 5/
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 4/ 6/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 4/
Table I, subgroup 2
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hours or
TA = +300°C at t = 2 hours
n = 11 wires, c = 0
Decap internal visual (design
2075
n = 4 devices, c = 0
verification) 4/
Subgroup 2
°C/W
Thermal impedance
3131
See 4.3.2
ZθJX
Collector to base cutoff current
3036
Condition D
ICBO1
µA dc
2N2218, 2N2219
10
VCB = 60 V dc
µA dc
2N2218A, 2N2219A
10
VCB = 75 V dc
µA dc
10
2N2218AL, 2N2219AL
VCB = 75 V dc
Emitter to base cutoff current
3061
IEBO1
µA dc
2N2218, 2N2219
10
VEB = 5 V dc
µA dc
2N2218A, 2N2219A
10
VEB = 6 V dc
µA dc
2N2218AL, 2N2219AL
10
VEB = 6 V dc
Breakdown voltage, collector to
3011
Bias condition D; IE = 10 mA dc;
V(BR)CEO
emitter
pulsed (see 4.5.1).
2N2218, 2N2219
30
V dc
2N2218A, 2N2219A
50
V dc
2N2218AL, 2N2219AL
50
V dc
See footnotes at end of table.
9



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