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MIL-PRF-19500-251 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2218, 2N2218A, 2N2218Al, 2N2219, 2N2219A, And 2N2219Al, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/251R
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector-emitter saturation
3071
IC = 150 mA dc; IB = 15 mA dc;
VCE(sat)1
voltage
pulsed (see 4.5.1)
2N2218, 2N2219
0.4
V dc
2N2218A, 2N2219A
0.3
V dc
2N2218AL, 2N2219AL
0.3
V dc
Collector-emitter saturation
3071
IC = 500 mA dc; IB = 50 mA dc;
VCE(sat)2
voltage
pulsed (see 4.5.1)
2N2218, 2N2219
1.6
V dc
2N2218A, 2N2219A
1.0
V dc
2N2218AL, 2N2219AL
1.0
V dc
Base-emitter saturation
3066
Test condition A; IC = 150 mA dc;
VBE(sat)1
voltage
IB = 15 mA dc; pulsed (see 4.5.1)
2N2218, 2N2219
0.6
1.3
V dc
2N2218A, 2N2219A
0.6
1.2
V dc
2N2218AL, 2N2219AL
0.6
1.2
V dc
3066
Base-emitter saturation
Test condition A; IC = 500 mA dc;
VBE(sat)2
voltage
IB = 50 mA dc; pulsed (see 4.5.1)
V dc
2.6
2N2218, 2N2219
V dc
2.0
2N2218A, 2N2219A
V dc
2.0
2N2218AL, 2N2219AL
Subgroup 3
TA = +150°C
High temperature operation
µA dc
Collector to base cutoff
3036
Bias condition D
10
ICBO3
current
2N2218, 2N2219
VCB = 50 V dc
2N2218A, 2N2219A
VCB = 60 V dc
2N2218AL, 2N2219AL
VCB = 60 V dc
TA = -55°C
Low temperature operation
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 10 mA dc
hFE6
2N2218, 2N2219
15
2N2218A, 2N2219A
35
2N2218AL, 2N2219AL
35
See footnotes at end of table.
11



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