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MIL-PRF-19500-251 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2218, 2N2218A, 2N2218Al, 2N2219, 2N2219A, And 2N2219Al, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/251R
1.4 Primary electrical characteristics.
Types
hFE at VCE = 10 V dc
hFE2
hFE3
hFE4 (1)
hFE5 (1)
hFE1
IC = 100 µA dc
IC = 1.0 mA dc
IC = 10 mA dc
IC = 150 mA dc
IC = 500 mA dc
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
2N2218
20
25
150
35
40
120
20
2N2219
35
50
325
75
100
300
30
2N2218A
30
35
150
40
40
120
20
2N2219A
50
75
325
100
100
300
30
2N2218AL
30
35
150
40
40
120
20
2N2219AL
50
75
325
100
100
300
30
Switching
| hfe |
Cobo
Types
toff
IC = 20 mA dc
IE = 0, VCE = 10 V dc
ton
100 kHz ≤ f ≤ 1 MHz
VCE = 20 V dc
f = 100 MHz
pF
ns
ns
Min
Max
Min
Max
Min
Max
Min
Max
2N2218
2.5
12.0
8
40
250
2N2219
2.5
12.0
8
40
250
2N2218A
2.5
12.0
8
35
300
2N2219A
2.5
12.0
8
35
300
2N2218AL
2.5
12.0
8
35
300
2N2219AL
2.5
12.0
8
35
300
VBE(sat)2 (1)
VCE(sat)1 (1)
VCE(sat)2 (1)
VBE(sat)1 (1)
Types
IC = 500 mA dc
IC = 150 mA dc
IC = 500 mA dc
IC = 150 mA dc
IB = 50 mA dc
IB = 15 mA dc
IB = 50 mA dc
IB = 15 mA dc
V dc
V dc
V dc
V dc
min
max
min
max
min
max
min
max
2N2218
0.4
1.6
0.6
1.3
2.6
2N2219
0.4
1.6
0.6
1.3
2.6
2N2218A
0.3
1.0
0.6
1.2
2.0
2N2219A
0.3
1.0
0.6
1.2
2.0
2N2218AL
0.3
1.0
0.6
1.2
2.0
2N2219AL
0.3
1.0
0.6
1.2
2.0
(1) Pulsed (see 4.5.1).
2



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