MIL-PRF-19500-291 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N2906A, 2N2906Al, 2N2907A, 2N2907Al, 2N2906Aua, 2N2907Aua, 2N2906Aub, 2N2906Aubc, 2N2907Aub, 2N2907Aubc, 2N2906Aubn, 2N2906Aubcn, 2N2907Aubn, And 2N2907Aubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhc, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jank...This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/291U

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic

failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective

action. Whenever a failure is identified as wafer lot and wafer processing related, the entire wafer lot and related

devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to

eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the

failure mode.

Step

Method

Condition

Steady-state life: 1,000 hours minimum, VCB = 10 dc, power and ambient shall be applied to

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achieve TJ = +150�C minimum using a minimum of PD = 75 percent of maximum rated PT as

defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time

decreased so long as the devices are stressed for a total of 45,000 device hours minimum,

and the actual time of test is at least 340 hours.

Blocking life, TA = +150�C, VCB = 80 percent of rated voltage, 48 hours minimum.

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n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

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4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX,and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.

See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)

herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with

table I, subgroup 2 and 4.5.3 herein.

4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

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Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).

1,000 hours, VCB = 10 V dc, power and ambient temperature shall be applied to

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the device to achieve TJ = +150�C minimum, and minimum power dissipation of

75 percent of max rated PT (see 1.3 herein); n = 45, c = 0. The sample size may

be increased and the test time decreased as long as the devices are stressed for

a total of 45,000 device hours minimum, and the actual time of test is at least 340

hours.