MIL-PRF-19500-291 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N2906A, 2N2906Al, 2N2907A, 2N2907Al, 2N2906Aua, 2N2907Aua, 2N2906Aub, 2N2906Aubc, 2N2907Aub, 2N2907Aubc, 2N2906Aubn, 2N2906Aubcn, 2N2907Aubn, And 2N2907Aubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhc, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jank...This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/291U

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as

defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias

conditions, TJ, and mounting conditions) for JANTX and JANTXV quality levels may be used. A justification

demonstrating equivalence is required. In addition, the manufacturing site's burn-in data and performance history will

be essential criteria for burn-in modification approval.

4.3.3 Thermal impedance measurements). The thermal impedance measurements shall be performed in

accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD

(and VC where appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and subgroup 2 of table I

shall comply with the thermal impedance graphs in figures 12, 13, 14, 15, and 16 (less than or equal to the curve

value at the same tH time) and shall be less than the process determined statistical maximum limit as outlined in

method 3131. See table III, subgroup 4 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only

(table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in

accordance with 4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)

and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein. See 4.4.2.2 herein for JAN,

JANTX, and JANTXV, group B testing. Electrical measurements (end-points) and delta requirements for JAN,

JANTX, and JANTXV, shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and

4.5.3 herein.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

VCB = 10 - 30 V dc. Adjust device current, or power, to achieve a minimum ĆTJ of 100�C.

1037

VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure

1027

occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,

table E-VIa, adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achieve a

TJ = +225�C minimum.

3131

RθJA, RθJC only (see 1.3).