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MIL-PRF-19500-291 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N2906A, 2N2906Al, 2N2907A, 2N2907Al, 2N2906Aua, 2N2907Aua, 2N2906Aub, 2N2906Aubc, 2N2907Aub, 2N2907Aubc, 2N2906Aubn, 2N2906Aubcn, 2N2907Aubn, And 2N2907Aubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhc, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jank...This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/291U
1.3 Maximum ratings. Unless otherwise specified TA = +25°C. - Continued.
Types
RθJA
RθJC
RθJSP(IS)
PT
PT
PT
PT
RθJSP(AM)
TA = +25°C
TC = +25°C
TSP(IS) = +25°C
(2) (3)
(2)
(2) (3)
(2) (3)
TSP(AM) =
(3)
+25°C (1) (2)
(1) (2)
(1) (2)
(1) (2)
°C/W
°C/W
°C/W
°C/W
W
W
W
W
2N2906A, L,
0.5
1.0
N/A
N/A
325
150
N/A
N/A
2N2907A, L
0.5
1.0
N/A
N/A
325
150
N/A
N/A
2N2906AUA,
(4) 0.5
N/A
1.0
1.5
(4) 325
N/A
110
40
2N2907AUA
(4) 0.5
N/A
1.0
1.5
(4) 325
N/A
110
40
2N2906AUB,
(4)0.5
N/A
1.0
N/A
(4) 325
N/A
90
N/A
and UBN
(4) 0.5
N/A
1.0
N/A
(4) 325
N/A
90
N/A
2N2907AUB
and UBN
2N2906AUBC
(4) 0.5
N/A
1.0
N/A
(4) 325
N/A
90
N/A
and UBCN
(4) 0.5
N/A
1.0
N/A
(4) 325
N/A
90
N/A
2N2907AUBC
and UBCN
(1)
For derating, see figures 6, 7, 8, 9, and 10.
(2)
See 3.3 for abbreviations.
(3)
For thermal curves, see figures 11, 12, 13, 14, and 15.
(4)
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6
and 11 for the UA, UB,, UBC, UBN, and UBCN package and use RθJA.
1.4 Primary electrical characteristics. Unless otherwise specified TA = +25°C.
hFE at VCE = 10 V dc
hFE1
hFE2
hFE3
hFE4 (1)
hFE5 (1)
IC = 150 mA dc
IC = 500 mA dc
IC = 0.1 mA dc
IC = 1.0 mA dc
IC = 10 mA dc
2N2906A,  2N2907A,  2N2906A  2N2907A  2N2906A  2N2907A  2N2906A  2N2907A  2N2906A 2N2907A L,
L, UA,UB, L, UA,UB, , L, UA,UB,  L, UA,UB,  L, UA,UB,  L, UA,UB,  L, UA,UB,  L, UA,UB,  L, UA,UB,
UA,UB,
UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN,
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
Min
40
75
40
100
40
100
40
100
40
50
Max
175
450
120
300
Switching (saturated)
Types
Limit
Cobo
ton
toff
|hfe|
100 kHz ≤ f ≤ 1 MHz
f = 100 MHz VCE = 20 V dc,
VCB = 10 V dc, IE = 0
IC = 20 mA dc
pF
ns
ns
2N2906A,
2N2907A,
L, UA, UB, UBC,
Min
2.0
UBN, UBCN
Max
8
45
300
Types
Limits
VCE(sat)1 (1)
VCE(sat)2 (1)
VBE(sat)1 (1)
VBE(sat)2 (1)
IC = 150 mA dc
IC = 500 mA dc
IC = 150 mA dc
IC = 500 mA dc
IB = 15 mA dc
IB = 50 mA dc
IB = 15 mA dc
IB = 50 mA dc
2N2906A, 2N2907A,
V dc
V dc
V dc
V dc
L, UA, UB, UBC
Min
0.6
UBN, UBCN
Max
0.4
1.6
1.3
2.6
(1) Pulsed see 4.5.1.
2



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