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MIL-PRF-19500-291 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N2906A, 2N2906Al, 2N2907A, 2N2907Al, 2N2906Aua, 2N2907Aua, 2N2906Aub, 2N2906Aubc, 2N2907Aub, 2N2907Aubc, 2N2906Aubn, 2N2906Aubcn, 2N2907Aubn, And 2N2907Aubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhc, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jank...This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/291U

4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).

RθJA RθJC only (see 1.3).

3131

Not applicable.

4.4.3.3 Group C sample selection. Samples for steps in group C shall be chosen at random from any inspection

lot containing the intended package type and lead finish procured to the same specification which is submitted to and

passes table I tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the

intended package type shall be considered as complying with the requirements for that subgroup.

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to

the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical

measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in

accordance with the applicable steps of 4.5.3.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except

the output capacitor shall be omitted.

4.5.3 Delta requirements. Delta requirements shall be as specified below:

Step

Inspection

MIL-STD-750

Symbol

Limit

Method

Conditions

ĆICB02

Collector-base cutoff

3036

Bias condition D,

100 percent of initial

current

value or 10 nA dc,

VCB = 50 V dc

(1)

whichever is greater.

�25 percent change

ĆhFE4

Forward current

3076

VCE = 10 V dc;

transfer ratio

from initial reading.

(1)

IC = 150 mA dc;

pulsed see 4.5.1

(1) Devices which exceed the table I limits for this test shall not be accepted.