MIL-PRF-19500-291 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N2906A, 2N2906Al, 2N2907A, 2N2907Al, 2N2906Aua, 2N2907Aua, 2N2906Aub, 2N2906Aubc, 2N2907Aub, 2N2907Aubc, 2N2906Aubn, 2N2906Aubcn, 2N2907Aubn, And 2N2907Aubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhc, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jank...This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/291U

TABLE III. Group E inspection (all quality levels) - for qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and 4.5.3 herein.

Subgroup 2

45 devices

c=0

1037

Intermittent life

VCB = 10 V dc, 6,000 cycles. Adjust device current, or

power, to achieve a minimum ĆTJ of 100�C.

Electrical measurements

See table I, subgroup 2 and 4.5.3 herein.

Subgroup 4

15 devices

Thermal resistance

3131

c=0

RθJSP(IS) may be calculated but shall be measured once

in the same package with a similar die size to confirm

calculations (may apply to multiple slash sheets).

RθJSP(AM) need be calculated only.

Thermal impedance

See MIL-PRF-19500, table E-IX, group E, subgroup 4.

Sample size

curves

N/A

Subgroup 5

Not applicable

Subgroup 6

11 devices

ESD

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.