MIL-PRF-19500-291 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N2906A, 2N2906Al, 2N2907A, 2N2907Al, 2N2906Aua, 2N2907Aua, 2N2906Aub, 2N2906Aubc, 2N2907Aub, 2N2907Aubc, 2N2906Aubn, 2N2906Aubcn, 2N2907Aubn, And 2N2907Aubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhc, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jank...This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/291U

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator

source impedance shall be 50 ohms.

2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.

FIGURE 16. Saturated turn-on switching time test circuit.

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator

source impedance shall be 50 ohms.

2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.

3. Alternate test point for high impedance attenuating probe.

FIGURE 17. Saturated turn-off switching time test circuit.