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MIL-PRF-19500-304 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R And A-Versions Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/304E

* TABLE I. Group A inspection.

MIL-STD-750

Limits

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

Inspection

Subgroup 2

Thermal impedance

3101

See 4.3.2

�C/W

ZθJX

Forward voltage

4011

1.5

V dc

tp < 8.3 ms, duty cycle < 2

VF2

percent pulse IF = 38 A(pk)

�A dc

Reverse current

4016

DC method VR = rated VR

IR1

(see 1.3)

Insulation resistance (case

1016

Test condition C, see 4.5.3

Ohms

RISO

to stud) applicable only to

1N3885, 1N3885A

1N3886, 1N3886A

1N3888, 1N3888A

Subgroup 3

TA = TC = 150�C

High temperature

operation:

DC method VR = rated VR(pk)

Reverse current

4016

mA dc

IR2

(see 1.3)

Subgroups 4 and 5

Not applicable

Subgroup 6 2/

IF = IFS; tp = 800 �s

4011

2.75

V dc

Forward voltage

VF1

Forward voltage

2.55

V dc

IF = IFS; tp = 8.3 ms

VF1

4011

Subgroup 7

TC = 55�C; IF = 1 A dc; VR = 30

Reverse recovery time

4031

trr

V dc, di/dt = -25 A/�s; Ir(rec) ≤ 2 A

(pk)

Non A

200

A-versions

150

1/ For sampling plan, see MIL-PRF-19500.

2/ VF1 shall be performed with either tp = 800 �s or tp = 8.3 ms.