MIL-PRF-19500-304 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R And A-Versions Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/304E

* 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor where

appropriate). The limit will be statistically derived. See appendix E, table E-IX, subgroup 4, of MIL-PRF-19500 and

table II, subgroup 4 herein. tMD = 50 to 300 �s.

4.3.3 Burn-in and life test. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, , test

condition B. TC = 100�C, rated IO, see 4.5.2.

a. 1N3885, 1N3890, 1N3890R

VR = 100 V (pk)

VR = 200 V (pk)

b. 1N3886, 1N3891, 1N3891R

c. 1N3888, 1N3893, 1N3893R

VR = 400 V (pk)

4.3.4 Screening JANHC and JANKC. Screening for JANHC and JANKC shall be in accordance with

MIL-PRF-19500 and herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500

and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2

herein. Delta measurements shall be in accordance with table III herein.

* 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

TC = 100�C; VR = rated VR (see 1.3), six surges. one surge per minute maximum.

4066

tp = 8.3 ms. Non-A version devises, IFS = 150 A; IO = 12 A dc A version devises,

IFS = 225 A; IO = 20 A dc.

0.25 rated IO < IO applied < rated IO (see 4.5.4) 2,000 cycles.

1037

IF = 35 A dc at: TA = 125�C for 96 hours, or adjusted as required by the chosen

1027

TA to give an average lot TJ = 275�C; f = 60 Hz; VR = rated VR (pk) (see 1.3).

For irradiated devices, include trr as an end-point measurement.

RθJC = rated RθJC (see 1.4); IM = 50 mA ≤ IM ≤ 250 mA; tH = 30 s minimum;

3101

tMD = 50 - 300 �s.

Peak reverse power PRM ≥ 636 W for square wave in accordance with test

4065

method 4065 of MIL-STD-750 (PRM ≥ 1,000 W for half-sine wave). Test shall be

performed on each sublot; sampling plan. n = 10, c = 0, electrical end-points,

see table I, subgroup 2 herein.