MIL-PRF-19500-304 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R And A-Versions Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/304E

TABLE III. Groups B and C delta electrical measurements. 1/ 2/ 3/ 4/ 5/

MIL-STD-750

Limits

Step

Inspection

Symbol

Unit

Method

Conditions

Min

Max

ĆVF

Thermal response

3101

mV dc

See 4.3.2, RθJC = rated RθJC

(see 1.4)

ĆVF3

Forward voltage

4011

+50 mV dc maximum

IF = 50 mA dc

change from previous to

post intermittent life and

thermal shock

measurement tests (JANS

only).

100 percent or �5 �A,

ĆIR1

Reverse current

4016

DC method VR = rated VR (dc)

(whichever is greater)

(see 1.3)

change from initial group A

reading.

1/ Devices which exceed the group A limits for this test shall be rejected.

2/ The delta measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table III herein, steps 1 and 2.

b. Subgroup 4, see table III herein, steps 1 and 2.

c. Subgroup 5, see table III herein, step 3.

3/ The delta measurements for table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table III herein, step 1.

4/ The delta electrical measurements for table E-VII of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table III herein, step 1.

b. Subgroup 6, see table III herein, steps 1 and 3 (JANS); and step 1 (JAN, JANTX, and JANTXV).

5/ The delta electrical measurements for table E-IX of MIL-PRF-19500 are as follows:

a. Subgroup 1, see table III herein, step 1.

b. Subgroup 2, see table III herein, step 3.