MIL-PRF-19500-304 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R And A-Versions Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/304E

3. REQUIREMENTS

* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-190500 and as modified herein.

* 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be

as specified in MIL-PRF-19500 and on figures 1, 2 (DO-4), and 3 (die).

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead

finish is desired, it shall be specified in the contract or purchase order (see 6.2).

3.4.2 Diode types 1N3885, 1N3886, and 1N3888 (see figure 1). Diode types1N3885, 1N3886, and 1N3888 have

the stud and seating plane electrically insulated from the anode, cathode, and case.

3.4.3 Diode types 1N3890, 1N3891, and 1N3893 (see figure 2). Diode types1N3890, 1N3891, and 1N3893

(forward polarity) have the cathode electrically connected to the stud and case.

3.4.4 Diode types 1N3890R, 1N3891R, and 1N3893R (see figure 2). Diode types1N3890R, 1N3891R, and

1N3893R (reverse polarity) have the anode electrically connected to the stud and case.

3.4.5 Dissimilar construction. Types utilizing construction as shown on figure 1 shall not be considered structurally

identical to types utilizing construction as shown in figure 2.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5.1 Polarity. The polarity shall be indicated by a graphic symbol with the arrow pointing toward the negative end

for forward bias. The reversed units shall also be marked with an R following the last digit in the type number.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

* 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4.VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500 and herein,

except lot accumulation period shall be 3 months in lieu of 6 weeks.

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified

herein. Tests in either polarity shall be sufficient to obtain qualification approval of both polarities.