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MIL-PRF-19500-304 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R And A-Versions Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/304E
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.2 Qualification for JANHC and JANKC. Qualification for JANHC and JANKC devices shall be in accordance
with MIL-PRF-19500.
* 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The
following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see
Measurement
table E-IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
1/ 3b
Surge (see 4.3.1)
Surge (see 4.3.1)
3c
Thermal impedance (see 4.3.2)
Thermal impedance (see 4.3.2)
VF2 and IR1
2/
VF2 and IR1
2/
9
Method 1038, of MIL-STD-750,
Method 1038, of MIL-STD-750,
10
test condition A, t = 96 hours
test condition A, t = 48 hours
Subgroup 2 of table I herein, VF2 and IR1;
Subgroup 2 of table I herein, VF2 and IR1;
11
ĆVF2 = 0.1 V (pk) from initial value;
ĆVF2 = 0.1 V(pk) from initial value;
ĆIR1 = ±5 µA dc or 100 percent from the
ĆIR1 = ±5 µA dc or 100 percent from the
initial value, whichever is greater.
initial value, whichever is greater.
Burn-in see 4.3.3 and 4.5.2, method 1038
Not applicable
12
of MIL-STD-750, test condition B
Subgroup 2 and 3 of table I herein, VF2
13
and IR1; ĆVF2 = 0.1 V (pk);
Not applicable
ĆIR1 = ±5 µA dc or 100 percent from the
initial value, whichever is greater
1/
Surge shall precede thermal response. These tests shall be performed anytime after screen 3 and before
screen 9.
2/
IR1 measurement shall not be indicative of an open condition.
4.3.1 Surge current. Surge current, see method 4066 of MIL-STD-750. IO = 0; VRM(w) = 0; six surges; TA = 25°C,
tp = 8.3 ms, one surge per minute maximum.
Surge current value (IFSM)
A - version
Non A - version
1N3885
290
190
1N3886
290
190
1N3888
290
190
1N3890, R
310
210
1N3891, R
310
210
1N3893, R
310
210
7



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