MIL-PRF-19500-308 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, R And A Versions Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon, semiconductor fast recovery, power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/308D

NOTES:

1. Monitoring oscilloscope requirements: tr ≤ 14 ns, Rin ≥ 9 MΩ, Cin ≤ 12 pF, Lin (series) ≤ 0.5 �H.

2. SW characteristics: Mercury-wetted make-before-break relay switched at a 60 Hz rate. The relay should

conduct for approximately 640 �s and be open for approximately 7.7 ms. (C.P. Clare HGP 1004 or

equivalent.)

3. Voltage source characteristics: Output impedance ≤ 0.5 Ω from 0 to 2 kHz.

FIGURE 2. Reverse recovery test circuit.

NOTE:

- 0.7

- 25 A

Adjust L and R in accordance with 4.5.2 to achieve T = 0.028 �s (L = 1.2 �H). Then di

�s

.028

FIGURE 3. Reverse recovery current waveform through device under test.