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MIL-PRF-19500-308 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, R And A Versions Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon, semiconductor fast recovery, power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/308D
* TABLE III. Groups A, B, C and E delta electrical end-point measurements. 2/ 3/ 4/
Step
Inspection 1/
MIL-STD-750
Symbo
Limits
Unit
l
Method
Conditions
Min
Max
≤ ±100 percent of
ĆIR
1.
Reverse current
4016
VR = rated VR, (see 1.3),
initial value or ±50
leakage
pulsed (see 4.5.3).
nA, whichever is
greater.
1/ Devices which exceed the group A limits for this test shall be rejected.
2/ The delta electrical measurements for table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as
follows:
a. Subgroup 3, see table III herein, step 1.
3/ The delta electrical measurements for table E-VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, step 1.
b. Subgroup 6, see table III herein, step 1.
4/ The delta electrical measurements for table E-IX of MIL-PRF-19500 are as follows:
a. Subgroup 1, see table III herein, step 1.
b. Subgroup 2, see table III herein, step 1.
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