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MIL-PRF-19500-308 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, R And A Versions Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon, semiconductor fast recovery, power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/308D
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
MIL-STD-750
Inspection
Sample plan
Method
Conditions
Subgroup 1
n = 45, c = 0
0°C to 100°C, 100 cycles.
Thermal Shock
1056
Hermetic seal
1071
Electrical tests
See table I, subgroup 2
Subgroup 2
n = 45, c = 0
HTRB
1038
Condition A; 1,000 hrs.
Electrical end-points
See table I, subgroup 2
Subgroup 4
Thermal impedance curves
See MIL-PRF-19500, table E-IX, group E,
subgroup 4.
Subgroup 5
n = 22, c = 0
Barometric Pressure
1001
t = 60 s, While the test is being performed, IR shall
be monitored and shall not exceed group A limits.
TC = 25°C.
1N3912, 8 mmHg; V = 300 Vdc.
1N3913, 8 mmHg; V = 400 Vdc.
Subgroup 6
ESD
1020
8



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