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MIL-PRF-19500-308 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, R And A Versions Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon, semiconductor fast recovery, power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/308D
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
Thermal impedance
3101
See 4.3.2
°C/W
ZθJX
Forward voltage
4011
1.40
V (pk)
VF2
tP < 8.3 ms, duty cycle < 2
percent pulse; if = 50 A(pk)
µA dc
Reverse current
4016
---
15
DC method, VR = rated VR
IR1
(see 1.3)
Subgroup 3
TC = 150°C
High temperature
operation:
Reverse current
4016
---
6.0
mA
DC method, VR = rated VR
IR2
dc
(see 1.3)
Subgroup 4
Reverse recovery time
4031
IF = 1 A dc; VR = 30 V dc;
di/dt = -25 A/µs
ir(rec) < 2 A(pk) See 4.5.2
See figures 2 and 3
Non A-versions
---
200
ns
trr
A-versions
---
150
ns
trr
Subgroup 5
IF = IF(surge), tp = 800 µs
Forward voltage
4011
2.75
V dc
VF1
Forward voltage
4011
2.55
V dc
IF = IF(surge) tp = 8.3 ms
VF1
1/ For sampling plan, see MIL-PRF-19500.
2/ VF1 shall be performed with either tp = 800 µs or tp = 8.3 ms.
7



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