MIL-PRF-19500-349 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N3506, 2N3506A, 2N3506L, 2N3506Al, 2N3506U4, 2N3506Au4, 2N3507, 2N3507L, 2N3507A, 2N3507Al, 2N3507U4, And 2N3507Au4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And JankcahThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/349J

* TABLE III Group E inspection (all quality levels) - for qualification or re-qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

45 devices

Subgroup 1

c=0

Test condition C, 500 cycles

1051

Temperature cycling

(air to air)

1071

Hermetic seal

Fine leak

Gross leak

See table I, subgroup 2 herein.

Electrical measurements

Subgroup 2

45 devices

c=0

Intermittent life

1037

Intermittent operation life: VCB = 10 V dc, 6,000 cycles.

Adjust device current, or power, to achieve a minimum ĆTJ

of +100�C.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Thermal impedance curves

See MIL-PRF-19500. table E-IX, group E, subgroup 4.

Sample size

N/A

Subgroup 5

Not applicable

Subgroup 6

11 devices

c=0

ESD (electrostatic discharge)

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.