MIL-PRF-19500-349 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N3506, 2N3506A, 2N3506L, 2N3506Al, 2N3506U4, 2N3506Au4, 2N3507, 2N3507L, 2N3507A, 2N3507Al, 2N3507U4, And 2N3507Au4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And JankcahThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/349J

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, 4.2.1, and as

specified herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.2.2 JANHC and JANKC die. Qualification for die shall be in accordance with MIL-PRF-19500.

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance, method 3131 of

MIL-STD-750, (see 4.3.2)

Not applicable

ICEX1, hFE2

48 hours minimum

ICEX1; hFE2;

ICEX1 and hFE2

ĆICEX1 = 100 percent of initial value or 200 nA dc,

whichever is greater;

ĆhFE2 = �15 percent of initial value

See 4.3.1

Subgroup 2 of table I herein;

Subgroups 2 and 3 of table I herein;

ĆICEX1 = 100 percent of initial value or 200 nA dc,

ĆICEX1 = 100 percent of initial value or 200 nA

whichever is greater;

dc, whichever is greater;

ĆhFE2 = �15 percent of initial value

(1) Shall be performed anytime after temperature cycling, screen 3a and does not need to be repeated in

screening requirements, for JANTX and JANTXV level devices.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used. A justification demonstrating equivalence is required. In addition, the

manufacturing site's burn-in data and performance history will be essential criteria for burn-in modification approval.

This option is limited to plants who are at least transitional (QML) approved or have an approved technical review

board (TRB).

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (and VC and VH where

appropriate). Measurement delay time (tMD) = 70 �s max. See table III, group E, subgroup 4 herein.

4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.