MIL-PRF-19500-368 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types: 2N3439, 2N3439L, 2N3439Ua, 2N3439U4, 2N3440, 2N3440L, 2N3440Ua, And 2N3440U4, Jan, Jantx, Jantxv, Jans, Janhcb, Jankcb, Janhcc, Jankcc Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/368M

Chip size.................................

.049 x .057 inch �.002 inch (1.24 mm x 1.45 mm �0.05 mm).

.010 � .0015 inch nominal (0.254 mm �0.038 mm).

Chip thickness........................

Top metal................................

Aluminum 15,000� minimum, 18,000� nominal

Back metal...............................

A. Al/Ti/Ni/Ag 12k�/3k�/7k�/7k�minimum,15k�/ 5k�/10k�/10k� nominal.

B. Gold 3,500� minimum, 5,000� nominal.

5. Backside.................................

Collector.

6. Bonding pad...........................

B = .005 x .008 inch (0.127 mm x 0.203 mm).

E = .010 x .007 inch (0.254 mm x 0.178 mm).

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions JANHCB and JANKCB (die) B versions.