MIL-PRF-19500-384 Semiconductor Device, Transistor, Npn, Silicon High-Power, Types 2N3584, 2N3585, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for this device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/384H

* TABLE III. Group E inspection (all quality levels) � for qualification or re-qualification only.

Inspection

Sample

MIL-STD-750

Method

Conditions

plan

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Delta measurements

See table II herein.

Subgroup 2

45 devices

c=0

Test temperature = +125�C; VCB = 30 V dc; T =

Blocking life

1048

1,000 hours.

Delta measurements

See table II herein.

Subgroup 4

Sample size

N/A

Thermal impedance

See MIL-PRF-19500.

curves

Subgroup 5

3 devices

c=0

Normal mounting pressure = 8 mm Hg �2 mm

Barometric pressure

1001

Hg for 60 seconds (minimum). ICBO at 320 V dc

and IC = 500 �A maximum.

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition A for 2N3585, condition B for 2N3584.