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MIL-PRF-19500-384 Semiconductor Device, Transistor, Npn, Silicon High-Power, Types 2N3584, 2N3585, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for this device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/384H
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 5
Safe operating area
3051
TC = +25°C, power application
(continuous dc)
time = 1 second, 1 cycle
Test 1
VCE = 17.5 V dc, IC = 2 A dc
Test 2
VCE = 100 V dc, IC = 350 mA dc
Test 3
2N3584
VCE = 250 V dc, IC = 37 mA dc
2N3585
VCE = 300 V dc, IC = 17 mA dc
Electrical measurements
See table I, subgroup 2.
Second breakdown,
3051
VCE = 100 V dc (see figure 2 and
SBIC
350
mA dc
collector current,
base forward biased
L = 100 µH, RBE = 20 Ω,
Second breakdown,
SBICEX
2.0
A dc
collector current,
VBE = 4 V dc (see figure 3 and
base reverse biased
and 4.5.3)
L = 500 µH, RBE = 50 Ω
Second breakdown
SBICER
1.4
A dc
collector current, base
with resistance return
For sampling plan, see MIL-PRF-19500.
1/
2/
This test required for the following end-point measurements only:
Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).
Group C, subgroups 2 and 6.
Group E, subgroup 1.
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