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MIL-PRF-19500-384 Semiconductor Device, Transistor, Npn, Silicon High-Power, Types 2N3584, 2N3585, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for this device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/384H
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
High temperature
TA = +150°C
operation:
Collector to emitter
3041
Bias condition A, VBE = -1.5 V
ICEX2
cutoff current
dc
2N3584
VCE = 300 V dc
2.0
mA dc
2N3585
VCE = 400 V dc
2.0
mA dc
Subgroup 4
Second breakdown,
3051
VCE = 100 V dc (see figure 2 and
SBIC
350
mA dc
collector current, base
forward biased
Pulse response
3251
Test condition A, except
substitute the NPN symbol for
the PNP.
µs
Turn-on time
VCC = 30 V dc,
ton
3.0
IC = 1 A dc, IB = 100 mA dc,
RC = 29 Ω
µs
Turn-off time
VCC = 30 V dc,
toff
7.0
IC = 1 A dc, IB1 = -IB2, = 100 mA
dc, RC = 29 Ω
Magnitude of common
3306
VCE = 10 V dc,
|hfe|
3.0
15
emitter small-signal
IC = 200 mA dc, f = 5 MHz
short-circuit forward-
current transfer ratio
Open circuit (output
3236
VCB = 10 V dc, IE = 0,
Cobo
120
pF
100 kHz ≤ f ≤ 1 MHz
capacitance)
Small-signal short-circuit
3206
VCE = 10 V dc, IC = 1 A dc,
hfe
25
200
forward-current transfer
f = 1 kHz
ratio
See footnotes at end of table.
8



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