MIL-PRF-19500-384 Semiconductor Device, Transistor, Npn, Silicon High-Power, Types 2N3584, 2N3585, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for this device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/384H

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows herein. Delta measurements shall be in

accordance with table II herein.

Subgroup

Method

Conditions

2036

Test condition A, weight = 10 pounds, time = 15 s.

See 4.3.2, RθJC = 5�C/W.

3131

ĆTJ = +100�C, test condition D. The heating cycle shall be 1 minute minimum.

1037

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Delta measurements shall be

in accordance with table II herein; they apply to subgroups E1 and E2.

4.5 Methods of inspection. Methods of inspection and test shall be as specified in the appropriate tables and as

follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 SBIC test. Set VCC = 100 V dc without pulse applied. Adjust generator to apply a single pulse of 1 second

duration obtain IC = 350 mA dc. The 1 second pulse width shall not be exceeded in adjustment and not more than

one pulse shall be applied in any 20 second interval. (See figure 2.)

4.5.3 SBICEX test. Set switch (SW) to required position for test. Adjust V3 so that the current through R3 is 2.0 A

dc. Device fails test if second breakdown occurs as indicated by collapse of oscilloscope display. (See figure 3.)

4.5.4 SBICER test. Set switch (SW) to required position for test. Adjust V3 so that the current through R3 is 1.4 A

dc. Device fails test if second breakdown occurs as indicated by collapse of oscilloscope display. (See figure 3.)

4.5.5 V(BR)CEO and V(BR)CER tests. The breakdown voltages V(BR)CEO and V(BR)CER shall not be measured on a curve

tracer. V(BR)CEO and V(BR)CER should be measured by means of the test circuit shown on figure 3. Set switch (SW) to

required position for test. Adjust V3 so that the current through R3 is 200 mA. Device fails test if collector to emitter

voltage is less than breakdown voltage limit at 200 mA.