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MIL-PRF-19500-384 Semiconductor Device, Transistor, Npn, Silicon High-Power, Types 2N3584, 2N3585, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for this device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/384H

* TABLE I. Group A inspection.

Inspection 1/

Symbol

Limits

Unit

MIL-STD-750

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

Thermal Impedance 2/

3131

See 4.3.2

�C/W

ZθJX

Breakdown voltage,

3011

Pulsed (see 4.5.1), IC = 10 mA

V(BR)CEO

collector to emitter

dc; bias condition D, (see figure

3 and 4.5.5)

2N3584

250

V dc

2N3585

300

V dc

Breakdown voltage,

3001

Bias condition D, IC = 15 mA dc,

V(BR)CBO

collector to base

pulsed (see 4.5.1), (see figure 3

and 4.5.5)

2N3584

375

V dc

2N3585

500

V dc

Emitter to base cutoff

3061

Bias condition D, VEB = 6.0 V dc

IEBO

0.5

mA dc

current

Collector to emitter

3041

Bias condition A, VBE = -1.5 V dc

ICEX1

cutoff current

2N3584

VCE = 300 V dc

1.0

mA dc

2N3585

VCE = 400 V dc

1.0

mA dc

Collector to emitter

3041

Bias condition D, VCE = 150 V dc

ICEO

5.0

mA dc

cutoff current

Base emitter voltage

3066

Test condition A, pulsed (see

VBE(sat)

1.4

V dc

(saturated)

4.5.1),

IC = 1 A dc, IB = 0.1 A dc

Collector to emitter

3071

Pulsed (see 4.5.1)

VCE(sat)

0.75

V dc

voltage (saturated)

IC = 1 A dc, IB = 0.125 A dc

Forward-current

3076

VCE = 10 V dc,

hFE1

100

transit ratio

IC = 1 A dc, pulsed (see 4.5.1)

Forward-current

3076

VCE = 10 V dc,

hFE2

transit ratio

IC = 100 mA dc, pulsed (see

4.5.1)

See footnotes at end of table.