MIL-PRF-19500/396L
* 4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
of MIL-PRF-19500)
JANS level
JANTX and JANTXV level
3a
Required
Required
3b
Not applicable
Not applicable
(1) 3c
Required method 3131 of MIL-STD-750.
Required method 3131 of MIL-STD-750.
See 4.3.3.
See 4.3.3.
4
9
Not applicable
ICBO2, hFE3 read and record
10
24 hours minimum
24 hours minimum
11
ICBO2; hFE3;
ICBO2; hFE3
ĆICBO2 = 100 percent of initial value or
10 nA dc, whichever is greater.
ĆhFE3 = ±15 percent
12
See 4.3.1
See 4.3.1
240 hours minimum
13
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ĆICBO2 = 100 percent of initial value or
ĆICBO2 = 100 percent of initial value or
10 nA dc, whichever is greater;
10 nA dc, whichever is greater;
ĆhFE3 = ±15 percent (2)
ĆhFE3 = ±15 percent
* (1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to
be repeated in screening requirements.
(2) PDA = 5 percent for screen 13, applies to ĆICBO2, ĆhFE3, ICBO2, hFE3. Thermal impedance (ZθJX) is not required
in screen 13.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10-30 V dc; power shall be
applied to achieve the required junction temperature, TJ = +135°C minimum using a minimum power dissipation = 75
percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices shall be permitted.
Power burn-in conditions for "L", "U4", and "UA" suffix devices are identical to their corresponding non-suffix devices.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where
appropriate). The ZθJX limit used in screen 3c of 4.3 shall comply with the thermal impedance graph on figures 13
through 19 (less than or equal to the curve value at the same tH time) or shall be less than the process determined
statistical maximum limit as outlined in method 3131.
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