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MIL-PRF-19500-397 Semiconductor Device, Transistor, Pnp, Silicon, Types 2N3743, 2N3743U4, 2N4930, 2N4930U4, 2N4931, And 2N4931U4, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for PNP, silicon, high-voltage transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/397J

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Limit

Unit

Symbol

Method

Conditions

Min

Max

Subgroup 1 2/

Visual and mechanical

2071

n = 45 devices, c = 0

examination 3/

Solderability 3/ 4/

2026

n = 15 leads, c = 0

Resistance to

1022

n = 15 devices, c = 0

solvent 3/ 4/ 5/

Temp cycling 3/ 4/

1051

Test condition C, 25 cycles.

n = 22 devices, c = 0

Hermetic seal 4/

1071

n = 22 devices, c = 0

Fine leak

Gross leak

Electrical

Table I, subgroup 2

measurements 4/

Bond strength 3/ 4/

2037

Precondition TA = +250�C at

t = 24 hrs or

TA = +300�C at t = 2 hrs,

n = 11 wires, c = 0

Decap internal visual

2075

n = 4 devices, c = 0

(design verification)

Subgroup 2

Thermal impedance 6/

3131

See 4.3.3

ZθJX

�C/W

Breakdown voltage,

3001

Bias condition D,

V(BR)CBO

collector to base

IC = 100 �A dc

2N3743, U4

300

V dc

2N4930, U4

200

V dc

2N4931, U4

250

V dc

Breakdown voltage,

3011

Pulsed (see 4.5.1), bias

V(BR)CEO

collector to emitter

condition D, IC = 1.0 mA dc

2N3743, U4

300

V dc

2N4930, U4

200

V dc

2N4931, U4

250

V dc

Breakdown voltage,

3026

Bias condition D,

V dc

V(BR)EBO

emitter to base

IE = 100 �A dc

See footnotes at end of table.