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MIL-PRF-19500-397 Semiconductor Device, Transistor, Pnp, Silicon, Types 2N3743, 2N3743U4, 2N4930, 2N4930U4, 2N4931, And 2N4931U4, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for PNP, silicon, high-voltage transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/397J
* TABLE I. Group A inspection. - Continued.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 -
Continued.
Collector to base
3036
Bias condition D, IE = 0
ICBO1
250
nA
cutoff current
2N3743, U4
VCB = 250 V dc
2N4930, U4
VCB = 150 V dc
2N4931, U4
VCB = 200 V dc
Emitter to base
3061
150
nA dc
Bias condition D, VEB = 4 V dc
IEBO
cutoff current
Forward current
3076
30
Pulsed (see 4.5.1),
hFE1
transfer ratio
IC = 0.1 mA dc, VCE = 10 V dc
Forward current
3076
40
Pulsed (see 4.5.1),
hFE2
transfer ratio
IC = 1.0 mA dc, VCE = 10 V dc
Forward current
3076
40
Pulsed (see 4.5.1),
hFE3
transfer ratio
IC = 10 mA dc, VCE = 10 V dc
Forward current
3076
50
200
Pulsed (see 4.5.1),
hFE4
transfer ratio
IC = 30 mA dc, VCE = 10 V dc
Forward current
3076
30
Pulsed (see 4.5.1),
hFE5
transfer ratio
IC = 50 mA dc, VCE = 20 V dc
Collector to emitter
3071
1.2
V dc
Pulsed (see 4.5.1),
VCE(sat)1
voltage (saturated)
IC = 30 mA dc, IB = 3 mA dc
Collector to emitter
3071
1.0
V dc
Pulsed (see 4.5.1),
VCE(sat)2
voltage (saturated)
IC = 10 mA dc, IB = 1 mA dc
Base emitter voltage
3066
1.0
V dc
Test condition A, IC = 10 mA dc,
VBE(sat)1
(saturated)
IB = 1 mA dc, pulsed (see 4.5.1)
Base emitter voltage
3066
1.2
V dc
Test condition A, IC = 30 mA dc,
VBE(sat)2
(saturated)
IB = 3 mA dc, pulsed (see 4.5.1)
See footnotes at end of table.
12



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