INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
MIL-PRF-19500/402F
completed by 12 November 2009.
12 August 2009
SUPERSEDING
MIL-PRF-19500/402E
12 March 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPE 2N3739, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-66).
1.3 Maximum ratings. Unless otherwise specified, TA = +25C.
Types
PT (1)
PT (1)
VCBO
VCEO
VEBO
IB
IC
TSTG and TJ
RJC
TC = +25C
TC = +100C
C/W
C
V dc
W
V dc
V dc
A dc
A dc
W
20
13
325
300
6.0
0.5
1.0
2N3739
7.5
-55 to +200
(1) For temperature-power derating curves, see figure 2.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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