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MIL-PRF-19500-402 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N3739, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/402F
*  4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points)
shall be in accordance with table I, subgroup 2 herein.
Subgroup
Method
Conditions
C2
2036
Test condition A, weight = 10 lbs, T = 15 seconds.
Thermal resistance, see 4.3.2, RJC(max) = 7.5C/W.
C5
3131
For solder die attach: VCB 10 V dc, 6,000 cycles. TA +35C.
C6
1037
For eutectic die attach: VCB = 10 V dc, TA +35C adjust PT to achieve TJ = +150C
1026
min.
*  4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
6



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