MIL-PRF-19500/402F
* TABLE I. Group A inspection.
Limits
MIL-STD-750
Unit
Symbol
Inspection 1/
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
See 4.3.2
3131
Thermal impedance 2/
ZθJX
°C/W
Bias condition D, IC = 5.0 mA dc
V(BR)CEO
300
Breakdown voltage,
3011
V dc
collector to emitter
Bias condition D, VCB = 325 V
ICBO1
A dc
3036
10
Collector to base
*
dc
cutoff current
Bias condition A, VCE = 300 V
ICEX
A dc
3041
20
Collector to emitter
*
dc,
cutoff current
VBE = 1.5 V dc
Bias condition D, VEB = 6.0 V dc
IEBO
3061
0.1
mA dc
Emitter to base
cutoff current
Test condition B, VCE = 10 V dc,
VBE
3066
1
V dc
Base to emitter,
IC = 100 mA dc;
non-saturated voltage
pulsed (see 4.5.1)
IC = 100 mA dc; IB = 10 mA dc;
VCE(sat)1
3071
0.75
V dc
Collector to emitter
pulsed (see 4.5.1)
voltage (saturated)
IC = 250 mA dc; IB = 25 mA dc;
VCE(sat)2
3071
2.5
V dc
Collector to emitter
pulsed (see 4.5.1)
voltage (saturated)
VCE = 10 V dc; IC = 10 mA dc;
hFE1
30
3076
Forward-current
pulsed (see 4.5.1)
transfer ratio
VCE = 10 V dc; IC = 50 mA dc;
hFE2
30
3076
Forward-current
pulsed (see 4.5.1)
transfer ratio
VCE = 10 V dc; IC = 100 mA dc;
hFE3
40
3076
200
Forward-current
pulsed (see 4.5.1)
transfer ratio
VCE = 10 V dc; IC = 250 mA dc;
hFE4
25
3076
Forward-current
pulsed (see 4.5.1)
transfer ratio
VCE = 10 V dc; IC = 500 mA dc;
hFE5
10
3076
Forward-current
pulsed (see 4.5.1)
transfer ratio
See footnotes at end of table.
7
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