MIL-PRF-19500-415 Semiconductor, Device, Transistor, Npn, Silicon, High-Power Types 2N2812 And 2N2814 Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/415A

TABLE III. Group E inspection (all quality levels) - for qualification or requalification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and table II herein.

Subgroup 2

45 devices

c=0

Intermittent operation life: VCB ≥ 10 V dc , 6,000

Intermittent life

1037

cycles.

Electrical measurements

See table I, subgroup 2 and table II herein.

Subgroup 3

3 devices,

c=0

DPA

2102

Subgroup 4

sample size

N/A

Each supplier shall submit their (typical) design

Thermal impedance curves

thermal impedance curves. In addition, test conditions

and ZθJX limit shall be provided to the qualifying activity

in the qualification report.

Subgroup 5 and 6

Not applicable

Subgroup 7

45 devices

c=0

Condition A for devices ≥ 400 V dc.

Reverse stability

1033

Condition B for devices < 400 V dc.